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TPCF8304
TOSHIBA Field Effect
Transistor Silicon P-Channel MOS Type (U-MOS IV)
TPCF8304
Notebook PC Applications Portable Equipment Applications
• • • • Low drain-source ON resistance: RDS (ON) = 60 mΩ (typ.
) High forward transfer admittance: |Yfs| = 5.
9 S (typ.
) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement model: Vth = −0.
8 to −2.
0 V, (VDS = −10 V, ID = −1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating -30 -30 ±20 -3.
2 -12.
8 1.
35 1...