SSM5G02TU
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial
Schottky Barrier Diode
SSM5G02TU
DC-DC Converter
• Combined Pch MOSFET and
Schottky Diode into one Package.
• Low RDS (ON) and Low VF
Unit: mm
Absolute Maximum Ratings (Ta = 25°C) MOSFET
Characteristics
Drain-Source voltage Gate-Source voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature
Symbol
Rating
Unit
VDS
−12
V
VGSS
±12
V
ID
−1.
0
A
IDP (Note 2)
−2.
0
PD (Note 1)
0.
5
W
t = 10s
0.
8
Tch
150
°C
Absolute Maximum Ratings (Ta = 25°C)
SCHOTTKY
DIODE
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage Reverse voltage Average forward current Peak one cycle surge ...