SSM5G09TU
Composite Devices Silicon P-Channel MOS (U-MOSIII)/Epitaxial
Schottky Barrier
SSM5G09TU
1.
Applications
• DC-DC Converters
2.
Features
(1) Combined an P-channel MOSFET and a diode in one package.
(2) Low RDS(ON) and Low VF
2.
1.
MOSFET Features
(1) Low drain-source on-resistance : RDS(ON) = 130 mΩ (max) (@VGS = -4.
0 V) RDS(ON) = 200 mΩ (max) (@VGS = -2.
5 V)
3.
Packaging and Internal Circuit
1: Gate 2: Source 3: Anode 4: Cathode 5: Drain
UFV
4.
Absolute Maximum Ratings (Note)
4.
1.
Absolute Maximum Ratings of the MOSFET (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current Drain current (pulsed) Power ...