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TOSHIBA Field-Effect
Transistor Silicon N-Channel MOS Type
SSM6K209FE
○ High-Speed Switching Applications ○ Power Management Switch Applications
• • 4.
0V drive Low ON-resistance: Ron = 145mΩ (max) (@VGS = 4.
0 V) Ron = 74mΩ (max) (@VGS = 10 V)
1.
6±0.
05 1.
0±0.
05 0.
5 0.
5 1 2 3 1.
6±0.
05 1.
2±0.
05
UNIT: mm
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 ± 20 2.
5 5.
0 500 150 −55~150 Unit V V
6 5 4 0.
2±0.
05
Unit V μA μA V S mΩ pF nC ns V
0.
55±0.
05
mW °C °C
1, 2, 5, 6 : Drain 3 :...