SSM6K24FE
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U-MOSIII)
SSM6K24FE
High Speed Switching Applications
• Optimum for high-density mounting in small packages • Low on-resistance: Ron = 145mΩ (max) (@VGS = 4.
5 V)
Ron = 180mΩ (max) (@VGS = 2.
5 V)
Unit: mm 1.
6±0.
05 1.
2±0.
05
0.
2±0.
05
1.
6±0.
05 1.
0±0.
05 0.
5 0.
5
Absolute Maximum Ratings (Ta = 25°C)
1
6
2
5
Characteristics Drain-Source voltage
Symbol VDS
Rating
Unit
30
V
3
4
0.
12±0.
05
0.
55±0.
05
Gate-Source voltage
VGSS
± 12
V
Drain current
DC
ID
Pulse
IDP
0.
5 A
1.
5
Drain power dissipation Channel temperature
PD
500
mW
(Note 1)
Tch
150
°C
1,2,5,6 :Drain 3 :Gate 4 :Source
Storage temperature r...