SSM6L05FU com
TOSHIBA Field Effect
Transistor Silicon N/P Channel MOS Type
SSM6L05FU
Power Management Switch High Speed Switching Applications
Unit: mm
• • •
Small package Low on resistance Q1: Ron = 0.
8 Ω (max) (@VGS = 4 V) Q2: Ron = 3.
3 Ω (max) (@VGS = −4 V) Low gate threshold voltage
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating 20 ±12 400 800 Unit V V mA
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating −20 ±12 −200 −400 Unit V V mA
JEDEC JEITA TOSHIBA
― ― 2-2J1C
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