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TOSHIBA Field-Effect
Transistor Silicon N / P Channel MOS Type
SSM6L36FE
○ High-Speed Switching Applications
• • 1.
5-V drive Low ON-resistance Q1 Nch: Ron = 1.
52Ω (max) (@VGS = 1.
5 V) Ron = 1.
14Ω (max) (@VGS = 1.
8 V) Ron = 0.
85Ω (max) (@VGS = 2.
5 V) Ron = 0.
66Ω (max) (@VGS = 4.
5 V) Ron = 0.
63Ω (max) (@VGS = 5.
0 V) Q2 Pch: Ron = 3.
60Ω (max) (@VGS = -1.
5 V) Ron = 2.
70Ω (max) (@VGS = -1.
8 V) Ron = 1.
60Ω (max) (@VGS = -2.
8 V) Ron = 1.
31Ω (max) (@VGS = -4.
5 V)
1.
6±0.
05 1.
2±0.
05
Unit: mm
1.
6±0.
05
1.
0±0.
05 0.
5 0.
5
1 2 3
6 5 4 0.
2±0.
05 0.
12±0.
05
•
0.
55±0.
05
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain–source voltage Gate–source voltage Drain cu...