SSM6N44FE
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM6N44FE
High Speed Switching Applications Analog Switching Applications
• Compact package suitable for high-density mounting • Low ON-resistance : RDS(ON) = 4.
0 Ω (max) (@VGS = 4 V)
: RDS(ON) = 7.
0 Ω (max) (@VGS = 2.
5 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
1.
6±0.
05 1.
0±0.
05 0.
5 0.
5
1.
6±0.
05 1.
2±0.
05
Unit: mm
1
6
2
5
0.
2±0.
05
Characteristics
Symbol
Rating
Unit
3
4
0.
12±0.
05
Drain-Source voltage
VDSS
30
V
Gate-Source voltage
VGSS
±20
V
Drain current
DC Pulse
ID
100
mA
IDP
200
Drain power dissipation (Ta = 25°C)
PD (Note 1)
150
mW
Channel temperature
Tch
150
°C
Storage...