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TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (U-MOSIII)
SSM6P26TU
High Speed Switching Applications
Unit: mm • • Optimum for high-density mounting in small packages Low on-resistance: Ron = 230mΩ (max) (@VGS = -4 V) Ron = 330mΩ (max) (@VGS = -2.
5 V)
0.
65 0.
65 2.
0±0.
1 2.
1±0.
1 1.
7±0.
1 +0.
1 0.
3-0.
05
Ron = 980mΩ (max) (@VGS = -1.
8 V)
1.
3±0.
1
1 2 3
6 5 4
(Q1, Q2 Common)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating -20 ±8 -0.
5 -1.
5 500 150 −55~150 Unit V V A...