SSM6P36FE
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type
SSM6P36FE
○ Power Management Switches
• 1.
5-V drive
• Low ON-resistance: Ron = 3.
60 Ω (max) (@VGS = -1.
5 V) Ron = 2.
70 Ω (max) (@VGS = -1.
8 V) Ron = 1.
60 Ω (max) (@VGS = -2.
8 V) Ron = 1.
31 Ω (max) (@VGS = -4.
5 V)
Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2)
1.
6±0.
05 1.
2±0.
05
Unit: mm
1
6
1.
6±0.
05 1.
0±0.
05 0.
5 0.
5
0.
2±0.
05
0.
12±0.
05
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature
Storage temperature range
VDSS
-20
V
VGSS
±8
V
ID
-330 mA
IDP
-660
PD (Note1)
150
mW
Tch
150
°C
Tstg...