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TK12X60U
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (DTMOS
)
TK12X60U
Switching
Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 0.
36 (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 7.
0 S (typ.
) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement-mode: Vth = 3.
0~5.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 12 A 24 100 69 12 10 150 -55~150 W mJ A mJ °C °C Unit V V
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avala...