MOSFETs Silicon N-Channel MOS (U-MOS-H)
TK50P04M1
1.
Applications
• Switching Voltage
Regulators • Motor Drivers • Power Management Switches
2.
Features
(1) High-speed switching (2) Low gate charge: QSW = 9.
4 nC (typ.
) (3) Low drain-source on-resistance: RDS(ON) = 6.
7 mΩ (typ.
) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
5 mA)
3.
Packaging and Internal Circuit
TK50P04M1
DPAK
1: Gate 2: Drain (heatsink) 3: Source
©2016 Toshiba Corporation
1
Start of commercial production
2009-02
2016-02-17 Rev.
5.
0
TK50P04M1
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
S...