Part Number
|
RJK03E9DPA |
Manufacturer
|
Renesas Technology |
Description
|
Silicon N Channel Power MOS FET |
Published
|
Jul 23, 2010 |
Detailed Description
|
Preliminary www.DataSheet4U.com Datasheet
RJK03E9DPA
Silicon N Channel Power MOS FET Power Switching
Features
High spee...
|
Datasheet
|
RJK03E9DPA
|
Overview
Preliminary www.
DataSheet4U.
com Datasheet
RJK03E9DPA
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.
5 m typ.
(at VGS = 8 V) Pb-free Halogen-free REJ03G1933-0210 Rev.
2.
10 May 20, 2010
Outline
RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2))
5 6 7 8 D D D D
5 6 7 8
4 G
4 3 2 1
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipat...
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