Preliminary www.
DataSheet4U.
com Datasheet RJK6006DPD Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 1.
4  typ.
(at ID = 2.
5 A, VGS = 10 V, Ta = 25C)  High speed switching REJ03G1935-0100 Rev.
1.
00 Jun 01, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1.
2.
3.
4.
Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature St...

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