RJK6029DJA

Preliminary www.DataSheet4U.com Datasheet RJK6029DJA Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 13.5  typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting REJ03G1895-0100 Rev.1.00 Jun 18, 2010 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) D G 1. Sou...