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com RJL5014DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1798-0100 Rev.
1.
00 Jun 30, 2009 Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1.
Gate 2.
Drain (Flange) 3.
Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 1...

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