INCHANGE Semiconductor
isc Product Specification
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isc Silicon
PNP Darlington Power
Transistor
2SB1340
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1889
APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-6
A
ICM
Collector Current-Peak Collector Power Dissipation @Ta=25℃
-10
A
2 W
PC Collector Power Dissipation @TC=25℃ TJ Junction Temperatu...