com 2.
5V Drive Nch MOSFET RSE002N06  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) EMT3 1.
6 0.
3 0.
7 0.
55 Features 1) High speed switing.
2) Small package(EMT3).
3) Low voltage drive(2.
5V drive).
(1)Source (2)Gate (3)Drain (3) 0.
8 (2) (1) 1.
6 0.
2 0.
5 0.
5 1.
0 0.
2 0.
15 Abbreviated symbol : RK  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RSE002N06 Taping TL 3000   Inner circuit (3) 0.
1Min.
∗2 (2) ∗1  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperatur...

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