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5V Drive Nch MOSFET RT1C060UN  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) Features 1) Low on-resistance.
2) High power package (TSST8).
3) Low voltage drive (1.
5V drive).
(1) (2) (3) (4) Abbreviated symbol : VB  Application Switching  Packaging specifications Package Code Basic ordering unit (pieces) RT1C060UN Type Taping TR 3000   Inner circuit (8) (7) (6) (5) ∗2  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Each terminal mounted...

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