isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Collector Current -IC= 10A ·DC Current Gain-
: hFE= 200(Min)@ IC= 5A ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for line operated switchmode applications
such as: ·Switching
regulators ·Inverters ·Solenoid and relay drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
320
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
10
A
50
W
150
℃
Tstg
Storage Tem...