DatasheetsPDF.com

CHA6517

Part Number CHA6517
Manufacturer United Monolithic Semiconductors
Description 6 - 18 GHz High Power Amplifier
Published Aug 16, 2010
Detailed Description www.DataSheet4U.com CHA6517 RoHS COMPLIANT 6 - 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description Th...
Datasheet CHA6517




Overview
www.
DataSheet4U.
com CHA6517 RoHS COMPLIANT 6 - 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications.
This device is manufactured using a UMS 0.
25 µm Power pHEMT process, including, via holes through the substrate and air bridges.
To simplify the assembly process: • the backside of the chip is both RF and DC grounded • bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process.
Output Power versus Frequency Vg Vd3 Main Features 0.
25 µm Power pHEMT Technology 6 – 18 GHz Freque...






Similar Datasheet



Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)