Part Number
|
CHA6517 |
Manufacturer
|
United Monolithic Semiconductors |
Description
|
6 - 18 GHz High Power Amplifier |
Published
|
Aug 16, 2010 |
Detailed Description
|
www.DataSheet4U.com
CHA6517
RoHS COMPLIANT
6 - 18 GHz High Power Amplifier
GaAs Monolithic Microwave IC Description
Th...
|
Datasheet
|
CHA6517
|
Overview
www.
DataSheet4U.
com
CHA6517
RoHS COMPLIANT
6 - 18 GHz High Power Amplifier
GaAs Monolithic Microwave IC Description
The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications.
This device is manufactured using a UMS 0.
25 µm Power pHEMT process, including, via holes through the substrate and air bridges.
To simplify the assembly process: • the backside of the chip is both RF and DC grounded • bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process.
Output Power versus Frequency
Vg
Vd3
Main Features
0.
25 µm Power pHEMT Technology 6 – 18 GHz Freque...
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