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BLS6G2731S-130
LDMOS S-band radar power
transistor
Rev.
01 — 26 July 2010 Objective data sheet
1.
Product profile
1.
1 General description
130 W LDMOS power
transistor intended for radar applications in the 2.
7 GHz to 3.
1 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation pulsed RF f (GHz) 2.
7 to 3.
1 VDS (V) 32 PL (W) 130 Gp (dB) 12.
5 ηD (%) 47 tr (ns) 20 tf (ns) 6
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features and benefits
Typical pulsed RF performanc...