DATA SHEET
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MOS FIELD EFFECT
TRANSISTOR
2SK3659
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER 2SK3659 PACKAGE Isolated TO-220
FEATURES
•4.
5V drive available.
•Low on-state resistance, RDS(on)1 = 5.
7 mΩ MAX.
(VGS = 10 V, ID = 40 A) •Low gate charge, QG = 32 nC TYP.
(VDD = 16 V, VGS = 10 V, ID = 65 A) •Built-in gate protection diode.
•Avalanche capability ratings.
•Isolated TO-220 package.
ABSOLUTE MAXIMUM RATING (TA...