com PRELIMINARY DATA SHEET 256M bits SDRAM EDS2532JEBH-6B (8M words × 32 bits) Specifications • Density: 256M bits • Organization ⎯ 2M words × 32 bits × 4 banks • Package: 90-ball FBGA ⎯ Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 2.
5V ± 0.
2V • Clock frequency: 166MHz (max.
) • 2KB page size ⎯ Row address: A0 to A11 ⎯ Column address: A0 to A8 • Four internal banks for concurrent operation • Interface: LVCMOS • Burst lengths (BL): 1, 2, 4, 8, full page • Burst type (BT): ⎯ Sequential (1, 2, 4, 8, full page) ⎯ Interleave (1, 2, 4, 8) • /CAS Latency (CL): 2, 3 • Precharge: auto precharge operation for each burst access • Driver strength: half/quarter • Refresh: auto-...

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