Power
Transistors
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2SC5584
Silicon
NPN triple diffusion mesa type
For horizontal deflection output
20.
0±0.
5
Unit: mm
(10.
0) (6.
0) (2.
0) (4.
0)
5.
0±0.
3 (3.
0) φ 3.
3±0.
2
■ Features
• High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area
26.
0±0.
5
(3.
0)
(1.
5)
(1.
5) 2.
0±0.
3 3.
0±0.
3 1.
0±0.
2 0.
6±0.
2 5.
45±0.
3 10.
9±0.
5 (1.
5) 2.
7±0.
3
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Base current Collector current Peak collector current * Collecto...