NDF08N60Z N-Channel Power MOSFET 600 V, 0.
95 W Features • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol NDF08N60Z Unit Drain−to−Source Voltage VDSS 600 V Continuous Drain Current RqJC (Note 1) ID 8.
4 A Continuous Drain Current RqJC TA = 100°C (Note 1) ID 5.
3 A Pulsed Drain Current, VGS @ 10 V IDM 30 A Power Dissipation Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 7.
5 A ESD (HBM) (JESD 22−A114) PD VGS EAS Vesd 36 W ±30 V 235 mJ 4000 V RMS Isolation Voltage (t = ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)