DataSheet.
in NDF08N60Z, NDP08N60Z N-Channel Power MOSFET 600 V, 0.
95 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 600 V http://onsemi.
com RDS(ON) (MAX) @ 3.
5 A 0.
95 W ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 7.
5 A ESD (HBM) (JESD 22−A114) RMS Isolation Voltage (t = 0.
3 sec.
, R.
H.
≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Te...

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