IPDH9N03LA G
IPSH9N03LA G
OptiMOS®2 Power-
Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant
Product Summary V DS R DS(on),max (SMD version) ID 25 9.
2 30 V mΩ A
Type
IPDH9N03LA G
IPSH9N03LA G
Package Marking
PG-TO252-3-11 H9N03LA
PG-TO251-3-11 H9N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Revers...