Part Number
|
R2J25953 |
Manufacturer
|
Renesas Technology |
Description
|
H-Bridge Control High Speed Power Switching |
Published
|
Nov 8, 2010 |
Detailed Description
|
Preliminary Datasheet
R2J25953
H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET
De...
|
Datasheet
|
R2J25953
|
Overview
Preliminary Datasheet
R2J25953
H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET
Description
The R2J25953 multi-chip module incorporates high-side Pch MOS FET, low-side Nch MOS FET, and Bi-CMOS driver in a single HSOP-36 package.
R07DS0044EJ0300 Rev.
3.
00 Sep 01, 2010
Features
For Automotive application Built-in low on state resistance MOS FET.
(Pch: 16 m Max.
, Nch: 11 m Max.
) Pch MOS FET is adopted on the high-side, and the charge pump noise was lost.
Built-in protection circuit of Thermal shut-down (TSD), Low Voltage Inhit (LVI), Overvoltage Detection (OVD) and Overcurrent Detection.
Built-in diagnostic function.
Built-in cross-conduction ...
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