RJK0210DPA

Preliminary Datasheet RJK0210DPA Silicon N Channel Power MOS FET Power Switching Features      Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V)  Pb-free  Halogen-free REJ03G1948-0021 Rev.0.21 Jul 02, 2010 Outline RENESAS Package code: PWSN0008DC-A (P...