Part Number
|
IRF7342QPBF |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Nov 9, 2010 |
Detailed Description
|
PD - 96109
IRF7342QPbF
O O O O O O O O
Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surfa...
|
Datasheet
|
IRF7342QPBF
|
Overview
PD - 96109
IRF7342QPbF
O O O O O O O O
Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free
HEXFET® Power MOSFET
S1 G1 S2 G2
1 2 3 4 8 7
D1 D1 D2 D2
VDSS = -55V RDS(on) = 0.
105Ω
6 5
Top View
Description
Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive ...
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