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IRF7706GPBF

Part Number IRF7706GPBF
Manufacturer International Rectifier
Description Power MOSFET
Published Nov 9, 2010
Detailed Description PD-96143 IRF7706GPbF l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.2...
Datasheet IRF7706GPBF




Overview
PD-96143 IRF7706GPbF l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.
2mm) Available in Tape & Reel Lead-Free Halogen-Free HEXFET® Power MOSFET VDSS -30V RDS(on) max 22mΩ@VGS = -10V 36mΩ@VGS = -4.
5V ID -7.
0A -5.
6A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de9 ! " # Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB ' & % $ 'Ã2Ã9 &Ã2ÃT %Ã2ÃT $Ã2Ã9 B T signer with an extremely efficient and reliable device for battery and load managem...






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