Part Number
|
IRF7756GPBF |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Nov 9, 2010 |
Detailed Description
|
PD- 96153A
IRF7756GPbF
HEXFET® Power MOSFET
l l l l l l l
Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOI...
|
Datasheet
|
IRF7756GPBF
|
Overview
PD- 96153A
IRF7756GPbF
HEXFET® Power MOSFET
l l l l l l l
Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.
2mm) Available in Tape & Reel Lead-Free Halogen-Free
VDSS
-12V
RDS(on) max
0.
040@VGS = -4.
5V 0.
058@VGS = -2.
5V 0.
087@VGS = -1.
8V
ID
-4.
3A -3.
4A -2.
2A
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner
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with an extremely efficient and reliable device...
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