PD - 97318A PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package IRGI4090PbF Key Parameters 300 1.
20 140 150 V V A °C VCE min VCE(ON) typ.
@ IC = 11A IRP max @ TC= 25°C TJ max C G E E C G n-channel G Gate C Collector TO-220AB Full-Pak E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels.
This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel e...

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