WTD1386
PNP EPITAXIAL PLANAR
TRANSISTOR
P b Lead(Pb)-Free
1.
BASE 2.
COLLECTOR 3.
EMITTER 2 3
Features:
* Low VCE(sat) = -0.
55(Typ.
) (IC/IB=-4A/-0.
1A) * Excellent DC Current Gain Characteristics
1
D-PAK(TO-252)
Mechanical Data:
* Case : Molded Plastic * Weight : 0.
925 grams
ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TC = 25°C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) PD Tj Tstg Value -30 -20 -6 -5 -10 20 +150 -55 to +150 Unit V V V A W ˚C ˚C
Device Marking WTD1386 = 1386
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