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WFP650
Silicon N-Channel MOSFET
Features
� � � � � � 28A, 200v, RDS(on)=0.
085Ω @VGS=10V Low gate charge (typical 95 nC) Low crss (typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Winsemi’s proprietary , planar,DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching Performance , and with stand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters, Switch mode power supplies, DC-AC converters...