Part Number
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WFP10N60 |
Manufacturer
|
WINSEMI SEMICONDUCTOR |
Description
|
Silicon N-Channel MOSFET |
Published
|
Nov 25, 2010 |
Detailed Description
|
www.DataSheet.in
P10N60 WF WFP
Silicon N-Channel MOSFET
Features
� � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-...
|
Datasheet
|
WFP10N60
|
Overview
www.
DataSheet.
in
P10N60 WF WFP
Silicon N-Channel MOSFET
Features
� � � � � � 10A,600V,RDS(on)(Max 0.
75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improved dv/dt capability
General Description
This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.
This latest technology has been especially designed to minimize on -state resistance,have a highrugged avalanche characteristics.
This devices is specially wellsuited for high efficiency switch mode power supplies , power factor correction, UPS and a
electronic lamp ballast base on half bridge.
Absolute Maximum Ratings
Symbol
VDSS ID...
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