Part Number
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WFF9N50 |
Manufacturer
|
WINSEMI SEMICONDUCTOR |
Description
|
Silicon N-Channel MOSFET |
Published
|
Nov 25, 2010 |
Detailed Description
|
www.DataSheet.in
WFF9N50
Silicon N-Channel MOSFET
Features
� � � � � 9A,500V, RDS(on)(Max0.85Ω)@VGS=10V Ultra-low Gate ...
|
Datasheet
|
WFF9N50
|
Overview
www.
DataSheet.
in
WFF9N50
Silicon N-Channel MOSFET
Features
� � � � � 9A,500V, RDS(on)(Max0.
85Ω)@VGS=10V Ultra-low Gate charge(Typical 30nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .
This devices is specially well suited for high efficiency switch model power supplies, power
factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
VDSS ID...
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