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Part Number
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FDD3510H |
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Manufacturer
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Fairchild Semiconductor |
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Description
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Dual N&P-Channel MOSFET |
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Published
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Dec 13, 2010 |
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Detailed Description
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FDD3510H Dual N & P-Channel PowerTrench® MOSFET
April 2008
FDD3510H
Dual N & P-Channel PowerTrench® MOSFET
Features
Q1...
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Datasheet
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FDD3510H
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Overview
FDD3510H Dual N & P-Channel PowerTrench® MOSFET
April 2008
FDD3510H
Dual N & P-Channel PowerTrench® MOSFET
Features
Q1: N-Channel Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.
3A Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.
1A Q2: P-Channel Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.
8A Max rDS(on) = 224mΩ at VGS = -4.
5V, ID = -2.
6A 100% UIL Tested RoHS Compliant
N-Channel: 80V, 13.
9A, 80mΩ P-Channel: -80V, -9.
4A, 190mΩ General Description
These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Appli...
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