Part Number
|
APT20GN60BDQ1G |
Manufacturer
|
Microsemi Corporation |
Description
|
High Speed PT IGBT |
Published
|
Dec 15, 2010 |
Detailed Description
|
TYPICAL PERFORMANCE CURVES
APT20GN60BDQ1 APT20GN60BD_SDQ1(G) APT20GN60SDQ1 APT20GN60BDQ1(G) APT20GN60SDQ1(G) 600V
*G De...
|
Datasheet
|
APT20GN60BDQ1G
|
Overview
TYPICAL PERFORMANCE CURVES
APT20GN60BDQ1 APT20GN60BD_SDQ1(G) APT20GN60SDQ1 APT20GN60BDQ1(G) APT20GN60SDQ1(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss.
Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient.
Low gate charge simplifies gate drive design and minimizes losses.
G
(B)
TO -2 47
D3PAK
(S)
C G E
• 600V Field Stop
• • • • Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability 175°C Rated
C
E
C G...
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