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Part Number
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KM718V847 |
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Manufacturer
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Samsung Semiconductor |
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Description
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(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM |
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Published
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Jan 12, 2011 |
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Detailed Description
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KM736V747 KM718V847
Document Title
128Kx36 & 256Kx18 Flow-Through NtRAMTM
128Kx36 & 256Kx18-Bit Flow Through NtRAMTM
...
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Datasheet
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KM718V847
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Overview
KM736V747 KM718V847
Document Title
128Kx36 & 256Kx18 Flow-Through NtRAMTM
128Kx36 & 256Kx18-Bit Flow Through NtRAMTM
Revision History
Rev.
No.
0.
0 0.
1 History 1.
Initial document.
1.
Changed tCD from 8.
0ns to 8.
5ns at -8 2.
Changed tCYC from 13ns to 12ns at -10 3.
Changed DC condition at Icc and parameters ISB1 ; from 10mA to 30mA, ISB2 ; from 10mA to 30mA Add VDDQ Supply voltage( 2.
5V I/O ) Changed VOL Max value from 0.
2V to 0.
4V at 2.
5V I/O.
Final spec Release Remove VDDQ Supply voltage(2.
5V I/O) Add VDDQ Supply voltage(2.
5V I/O) Change tCD value form 8.
5ns to 8.
0ns at -8 Draft Date July.
15.
1998 Oct.
10.
1998 Remark Preliminary Preliminary
0.
2 0.
3 1.
0 2.
0 3.
0 4.
0
Dec.
10.
1998 Dec.
...
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