PROCESS
Power
Transistor
PNP - Darlington Chip
CP547
Central
TM
Semiconductor Corp.
com
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 290 PRINCIPAL DEVICE TYPES MJ11011 2N6285 MJ11013 2N6286 MJ11015 2N6287 EPITAXIAL BASE 195 X 195 MILS 12 MILS 29 X 29 MILS 61 X 35 MILS AI - 30,000Å Ti/Ni/Au - 6,000Å
BACKSIDE COLLECTOR
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R3 (1-August 2002)
Central
TM
PROCESS
CP547
com
Semiconductor Corp.
Typical Electrical Characteristics
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