NTMS4807N Power MOSFET Features 30 V, 14.
8 A, N-Channel, SO-8 •ăLow RDS(on) to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThis is a Pb-Free Device Applications V(BR)DSS 30 V 7.
5 mW @ 4.
5 V com http://onsemi.
com RDS(ON) MAX 6.
1 mW @ 10 V 14.
8 A ID MAX •ăDisk Drives •ăDC-DC Converters •ăPrinters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA, t v 10 s (Note 1) Po...

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