NTMD4884NF Power MOSFET and
Schottky Diode
Features
30 V, 5.
7 A, Single N-Channel with 30 V, 2.
8 A,
Schottky Barrier Diode
•ăFETKYt Surface Mount Package Saves Board Space •ăIndependent Pin-Out for MOSFET and
Schottky Allowing for
Design Flexibility •ăLow RDS(on) MOSFET and Low VF
Schottky to Minimize Conduction Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThis is a Pb-Free Device
Applications
V(BR)DSS 30 V
www.
DataSheet4U.
com
http://onsemi.
com N-CHANNEL MOSFET
RDS(on) Max 48 mW @ 10 V 70 mW @ 4.
5 V ID Max 5.
7 A
•ăDisk Drives •ăDC-DC Converters •ăPrinters
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating Drain-to-Source Voltage Gate-to-Source Voltage Cont...