IPB031NE7N3 G
OptiMOSTM3 Power-
Transistor
Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPB031NE7N3 G
Product Summary V DS R DS(on),max ID 75 3.
1 100 V mΩ A
Package Marking
PG-TO263-3 031NE7N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current2)...