DMG4812SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH
SCHOTTKY DIODE
Product Summary
V(BR)DSS 30V
RDS(on)
15mΩ @ VGS= 10V 18.
5mΩ @ VGS= 4.
5V
ID max
TA = +25°C 10.
7A
9.
6A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a
Schottky in a single die to deliver: Low RDS(ON) - minimizes conduction losses Low VSD - reducing the losses due to body diode conduction Low Qrr - lower Qrr of the integrated
Schottky reduces body diode swit...