PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@3.
2A=65mΩ • RDS(ON), VGS@4.
5V,IDS@2.
8A=85mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Load Switch, PWM Applications • ESD Protected • Component are in compliance with EU RoHS 2002/95/EC directives MECHANICALDATA • Case: SOT-23 Package • Terminals : Solderable per MIL-STD-750,Method 2026 • Marking : 06 D 3 Top View 1 G 2 S Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D r a i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti...

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