Part Number
|
HY5S2B6DLF-SE |
Manufacturer
|
Hynix Semiconductor |
Description
|
4Banks x 2M x 16bits Synchronous DRAM |
Published
|
Mar 2, 2011 |
Detailed Description
|
HY5S2B6DLF(P)-xE 4Banks x 2M x 16bits Synchronous DRAM Document Title
4Bank x 2M x 16bits Synchronous DRAM
Revision His...
|
Datasheet
|
HY5S2B6DLF-SE
|
Overview
HY5S2B6DLF(P)-xE 4Banks x 2M x 16bits Synchronous DRAM Document Title
4Bank x 2M x 16bits Synchronous DRAM
Revision History
Revision No.
0.
1 0.
2 0.
3 History Initial Draft Deleted Preliminary Changed Operation Voltage : 1.
65(min) - 1.
70(min) Draft Date Dec.
2003 May.
2004 Feb.
2005 Remark Preliminary
This document is a general product description and is subject to change without notice.
Hynix Semiconductor does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev.
0.
3 / Feb.
2005 1
1HY5S2B6DLF(P)-xE 4Banks x 2M x 16bits Synchronous DRAM
DESCRIPTION
The Hynix Mobile SDR is suited for non-PC application which use the batteries such as PDAs, 2.
5G a...
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