Part Number
|
MMBD202CC |
Manufacturer
|
SEMTECH ELECTRONICS |
Description
|
SILICON EPITAXIAL PLANAR SWITCHING DIODE |
Published
|
Mar 3, 2011 |
Detailed Description
|
MMBD202CC
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Application • Ultra high speed switching
3
1
2
Marking Code: A4 S...
|
Datasheet
|
MMBD202CC
|
Overview
MMBD202CC
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Application • Ultra high speed switching
3
1
2
Marking Code: A4 SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Surge Current (t = 1 µs) Power Dissipation Junction Temperature Storage Temperature Range
Symbol VRM VR IO IFM IFSM Ptot Tj Ts
Value 80 80 100 300 4 200 150 - 55 to + 150
Unit V V mA mA A mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 70 V Total Capacitance at VR = 6 V, f = 1 MHz Reverse Recovery Time at VR = 6 V, IF = 5 mA, RL = 50 Ω Symbol VF...
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