N-Channel Enhancement Mode Field Effect
Transistor FEATURES
30V, 125A, RDS(ON) = 3.
2mΩ @VGS = 10V.
RDS(ON) = 7.
0mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
CED93A3/CEU93A3
PRELIMINARY
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 30
Units V V A A W W/ C mJ A C
±20
125 500 57 0.
46 800 40 -55 to 150
Maximum Power Dissipation @ TC = 25 C ...